Robust index storage for non-volatile memory

ABSTRACT

A non-volatile memory data address translation scheme is described that utilizes a hierarchal address translation system that is stored in the non-volatile memory itself. Embodiments of the present invention utilize a hierarchal address data and translation system wherein the address translation data entries are stored in one or more data structures/tables in the hierarchy, one or more of which can be updated in-place multiple times without having to overwrite data. This hierarchal address translation data structure and multiple update of data entries in the individual tables/data structures allow the hierarchal address translation data structure to be efficiently stored in a non-volatile memory array without markedly inducing write fatigue or adversely affecting the lifetime of the part. The hierarchal address translation of embodiments of the present invention also allow for an address translation layer that does not have to be resident in system RAM for operation.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to integrated circuits and inparticular the present invention relates to sector address translationand sector update of non-volatile memory devices.

BACKGROUND OF THE INVENTION

Memory devices are typically provided as internal storage areas in acomputer. The term memory identifies data storage that comes in the formof integrated circuit chips. There are several different types of memoryused in modern electronics, one common type is RAM (random-accessmemory). RAM is characteristically found in use as main memory in acomputer environment. RAM refers to read and write memory; that is, datacan be both written to and read from RAM. This is in contrast to ROM,which permits only the reading of data. Most RAM is volatile, whichmeans that it requires a steady flow of electricity to maintain itscontents. As soon as the power is turned off, whatever data was in RAMis lost.

Computers almost always contain a small amount of read-only memory (ROM)that holds instructions for starting up the computer. Unlike RAM, ROMcannot be written to. An EEPROM (electrically erasable programmableread-only memory) is a special type non-volatile ROM that can be erasedby exposing it to an electrical charge. EEPROM comprise a large numberof memory cells having electrically isolated gates (floating gates).Data is stored in the memory cells in the form of charge on the floatinggates. Charge is transported to or removed from the floating gates byspecialized programming and erase operations, respectively.

Yet another type of non-volatile memory is a Flash memory. A Flashmemory is a type of EEPROM that can be erased and reprogrammed in blocksinstead of one byte at a time. A typical Flash memory comprises a memoryarray, which includes a large number of memory cells. Each of the memorycells includes a floating gate field-effect transistor capable ofholding a charge. The data in a cell is determined by the presence orabsence of the charge in the floating gate. The cells are usuallygrouped into sections called “erase blocks.” The memory cells of a Flashmemory array are typically arranged into a “NOR” architecture (the cellsarranged in an array of rows and columns, each cell directly coupled toa bitline) or a “NAND” architecture (cells coupled into “strings” ofcells, such that each cell is coupled indirectly to a bitline andrequires activating the other cells of the string for access). Each ofthe cells within an erase block can be electrically programmed in arandom basis by charging the floating gate. The charge can be removedfrom the floating gate by a block erase operation, wherein all floatinggate memory cells in the erase block are erased in a single operation.Other types of non-volatile memory include, but are not limited to,Polymer Memory, Ferroelectric Random Access Memory (FeRAM), OvionicsUnified Memory (OUM), Nitride Read Only Memory (NROM), Carbon Nanotubememory, and Magnetoresistive Random Access Memory (MRAM).

Because all the cells in an erase block of a Flash memory device mustgenerally be erased all at once, one cannot directly rewrite a Flashmemory cell without first engaging in a block erase operation. Eraseblock management (EBM) provides an abstraction layer for this to thehost, allowing the Flash device to appear as a freely rewriteabledevice. Erase block management also allows for load leveling of theinternal floating gate memory cells to help prevent write fatiguefailure. Write fatigue is where the floating gate memory cell, afterrepetitive writes and erasures, no longer properly erases. Load levelingprocedures increase the mean time between failure of the erase block andFlash memory device as a whole.

In many modern Flash memory devices implementations, the host interfaceand/or erase block management routines additionally allow the Flashmemory device to appear as a read/write mass storage device (i.e., amagnetic disk) to the host, storing data in the Flash memory in 512-bytesectors. As stated above, the erase block management routines/addresstranslation layer provide the necessary linkage between the host and theinternal Flash memory device erase block array, logically mappinglogical sectors to physical sectors on the Flash device and managingblock erasure.

To accomplish this mapping of a logical sector to a physical sector inthe Flash memory of the prior art, either a table is kept in RAM or thephysical sectors are scanned for the physical sector that contains therequested logical sector address. With the data storage capacity ofmodern Flash memories increasing issues are being caused with the sizeof the required RAM table and/or the time required to scan the Flashmemory for the requested sector. This is particularly an important issuein resource limited handheld or embedded devices.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art fora non-volatile memory device and/or erase block management with improvedlogical to physical sector mapping.

SUMMARY OF THE INVENTION

The above-mentioned problems with logical to physical sector mapping andother problems are addressed by the present invention and will beunderstood by reading and studying the following specification.

The various embodiments relate to non-volatile memory devices thatutilize a robust index storage where a hierarchal address translationsystem stores the address translation data in the non-volatile memoryarray in a hierarchal data structure. As stated above, the translationof logical sectors to the physical blocks/sectors by a controller and/orsoftware/firmware is necessary for a non-volatile memory to appear as afreely rewriteable device to the system or processor that it is coupledto. The addressing data and controller or firmware responsible for thistranslation is called the translation layer (TL). Embodiments of thepresent invention utilize hierarchal address translation data whereinthe data entries in one or more data structures/tables in the hierarchycan be updated multiple times without having to overwrite data (alsoknown as “update in-place”), as would be required in a conventionaladdress translation table, as data is moved or updated in the memoryarray. This hierarchal address translation data structure and multipleupdate of data entries in the individual tables/data structures allowthe hierarchal address translation data structure to be efficientlystored in a non-volatile memory array without overly increasing theinducement of write fatigue or adversely affecting the lifetime of thepart. The hierarchal address translation embodiments of the presentinvention also allow for an address translation layer that does not haveto be resident in system RAM for operation or allow a reduced presencein system RAM by the caching of selected tables and data structures.

For one embodiment, the invention provides a method of translating alogical address to a physical address in a memory device comprisinglooking up a logical address in a hierarchal address translation datastructure to translate the logical address to a physical address,wherein the hierarchal address translation data structure contains twoor more Tables/data structures arranged in a hierarchal data tree.

In another embodiment, the invention provides a method of abstractinglogical addresses to physical addresses of a memory device utilizing anaddress translation layer comprising looking up a logical address withan address translation table and translating the logical address to alogical erase block ID, and translating the logical erase block ID to aphysical erase block ID utilizing a Logical to Physical Erase BlockTranslation Table.

In yet another embodiment, the invention provides a method of storingaddress translation data in a non-volatile memory array comprisingstoring address translation data in a hierarchal address translationdata structure of two or more Tables/data structures, where the two ormore Tables/data structures are arranged in a hierarchal tree.

In a further embodiment, the invention provides a system comprising ahost coupled to a non-volatile memory device, wherein the system isadapted to translate logical addresses to physical addresses in thenon-volatile memory device utilizing hierarchal address translationdata.

In yet a further embodiment, the invention provides a non-volatilememory device comprising a non-volatile memory array having a pluralityof non-volatile memory cells, and a control circuit, wherein the controlcircuit is adapted to access a logical address from the memory array bytranslating the logical address to a physical sector address of thememory array in reference to a hierarchal address translation datastructure stored in the non-volatile memory array.

Further embodiments of the invention include methods and apparatus ofvarying scope.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 details a memory system with a memory and memory controller inaccordance with embodiments of the present invention.

FIGS. 2A and 2B detail encoding of logical address blocks/sectors inFlash memory arrays in accordance with embodiments of the presentinvention.

FIG. 3A details a block diagram of a logical sector address translationin a memory system of the prior art.

FIGS. 3B and 3C detail block diagrams of cluster based logical sectoraddress translation in accordance with embodiments of the presentinvention.

FIG. 4A details encoding of logical sectors and valid/invalid flags inan erase block of a memory system of the prior art.

FIGS. 4B and 4C detail encoding of a version based logical sectors withversion data fields in accordance with embodiments of the presentinvention.

FIGS. 5A and 5B detail hierarchal address translation systems and datastructures in accordance with embodiments of the present invention.

FIGS. 6A-6E detail flowcharts of hierarchal address translation inaccordance with embodiments of the present invention.

FIG. 7 details a hierarchal address translation system and datastructure in accordance with one embodiment of the present invention.

FIGS. 8A-8D detail flowcharts of hierarchal address translation inaccordance with one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration specific preferredembodiments in which the inventions may be practiced. These embodimentsare described in sufficient detail to enable those skilled in the art topractice the invention, and it is to be understood that otherembodiments may be utilized and that logical, mechanical and electricalchanges may be made without departing from the spirit and scope of thepresent invention. The following detailed description is, therefore, notto be taken in a limiting sense, and the scope of the present inventionis defined only by the claims and equivalents thereof.

As stated above, the various embodiments relate to non-volatile memorydevices that utilize a hierarchal address translation system that storesthe address translation data in the non-volatile memory array in ahierarchal data structure. In non-volatile memory devices, and inparticular Flash memory devices, because all the cells in an erase blockof a non-volatile memory device must be erased at once, one cannotdirectly rewrite a block erased non-volatile memory cell without firstengaging in a block erase operation. This characteristic typicallyrestricts non-volatile memory devices from directly storing data that isfrequently updated, as each data change would require the entire datastructure to be relocated and force the erase blocks to be frequentlyreclaimed and scheduled for erasure. In addition, write fatigue furtherrestricts the use of both block erase and non-block erase non-volatilememory in storing frequently updated data and data structures. As such,address translation tables, which enable the operation of thenon-volatile memory as a freely rewriteable device with the erase blockmanagement (EBM) abstraction layer and store the information fortranslating the logical address of a memory access request to thephysical address and/or physical erase block where the requested data isstored, are typically held and updated in RAM during operation and notwritten back to non-volatile memory until power-down or some othertriggering event requires it to be.

Embodiments of the present invention store address translation data in ahierarchal data structure, wherein the data entries are held in one ormore data structures/tables arranged in a hierarchal tree and can beupdated multiple times without having to overwrite and/or move data.This allows the data structures and tables of the hierarchal addresstranslation data structure to be updated in-place multiple times withouthaving to be moved/erased as the underlying data/sectors of the memoryarray are moved or updated, as would be required with a conventionaladdress translation table. This hierarchal address translation datastructure and multiple update capability of data entries in theindividual tables/data structures allow the hierarchal addresstranslation data structure to be efficiently stored in a non-volatilememory array without overly increasing write fatigue or adverselyaffecting the lifetime of the part. The hierarchal address translationof embodiments of the present invention also allow for an addresstranslation layer that can be utilized directly from the non-volatilememory address space and does not have to be resident in system RAM foroperation; or allow for a reduced presence in system RAM by the cachingof selected tables and data structures.

Because all the cells in an erase block of a non-volatile memory device,and in particular, a Flash memory device, are generally erased all atonce, one cannot directly rewrite a memory cell without first engagingin a block erase operation. Erase Block Management (EBM), typicallyunder the control of an internal state machine, an external memorycontroller, or software driver, provides an abstraction layer for thisto the host (a system, a processor or an external memory controller),allowing the non-volatile device to appear as a freely rewriteabledevice. Erase block management also provides routines for managing thearray of the Flash memory device, including, but not limited to,managing the logical address to physical address translation mappingwith the translation layer, assigning of erased and available eraseblocks for utilization, marking old data blocks/sectors as invalid afterthe data has been moved or updated and written in a new datablock/sector, and scheduling erase blocks that have been used and closedout for block erasure. EBM also allows for load leveling of the internalfloating gate memory cells to help prevent write fatigue failure.

A translation layer in conjunction with the erase block managementmanages the storage of logical sectors in non-volatile memory devices ora non-volatile memory subsystem. The client of a translation layer istypically the file system or operating system of an associated system orprocessor. The goal of the translation layer/EBM layer is to make thenon-volatile memory appear as a freely rewriteable device or magneticdisk/hard drive, by remapping logical addresses of accesses to differingphysical addresses when new data is written and/or old data invalidatedallowing the old location to be block erased and reclaimed for futureuse. It is noted that other translation layers can allow the directreading and writing of data to a non-volatile memory without presentingthe non-volatile memory as a formatted file system.

FIG. 1 is a simplified diagram of a system 100 that incorporates a Flashmemory device 104 embodiment of the present invention. In the system 100of FIG. 1, the Flash memory 104 is coupled to a processor 102 with anaddress/data bus 106. Internally to the Flash memory device, a controlstate machine 110 directs internal operation of the Flash memory device;managing the Flash memory array 108 and updating control registers andtables 114. The Flash memory array 108 contains floating gate memorycells arranged in a sequence of erase blocks 116, 118. Each erase block116, 118 contains a series of physical pages or rows 120, each pagecontaining physical storage for one or more logical sectors or logicaldata blocks 124 (referred to herein as a logical sector and shown inFIG. 1 for illustration purposes as a single logical sector 124 perphysical page/row 120) that contain a user data space and acontrol/overhead data space. The control data space contains overheadinformation for operation of the logical sector 124, such as an errorcorrection code (not shown), status flags, logical sector ID, or anerase block management data field area (not shown). The user data spacein each logical sector 124 is typically 512 bytes long. It is noted thatother interfaces to the Flash memory 104 and formats for the eraseblocks 116, 118, physical pages 120, and logical sectors/blocks 124 arepossible and should be apparent to those skilled in the art with benefitof the present disclosure. It is also noted that additional Flash memorydevices 104 may be incorporated into the system 100 as required. In FIG.1, the logical sectors contain version number data fields which arewritten with a version number when the logical sectors are used to storedata, and address translation of the logical sector address to physicalblock/sector address in the Flash memory 104 utilizes version basedaddress translation incorporating embodiments of the present invention.

FIGS. 2A and 2B detail encoding 200, 220 of user data into logicalsectors of a Flash memory array. In FIG. 2A, user data 212 andheader/overhead data 214 is shown in a memory array 202 (or into anerase block N 202 of a memory array), where a single 512-byte logicalsector is encoded in each physical page/row 210 of the memory array 202.The memory array 202 contains a series of rows 210, each row containinga logical sector having a user data area 204 and an overhead data area206.

In FIG. 2B, user data 226 and header/overhead data 228 is shown in amemory array 222 (or into an erase block N 222 of a memory array), wherea multiple logical sectors 232 are encoded in each physical page/row 230of the memory array 222. As stated above, many memories support multiplelogical sectors 232 within a single physical row page 230. Inparticular, NAND architecture Flash memories typically utilize thisapproach due to their generally higher memory cell density and largerrow page sizes. The memory row 230 contains multiple logical sectors 232(Sector 1, Sector 2, Sector 3 and Sector 4), each logical sector 232having a user data area 226 and an overhead data/block header section228. The overhead data/block header section 228 of each logical sectoris typically stored at the end of the row and will generally contain anECC, a logical sector ID, and other overhead/management data for thedata stored in the user data area 226 of the sector 232. It is notedthat the row pages 210 and 230 of FIGS. 2A and 2B are for illustrationpurposes and that other row page sector formats of differing data sizes,numbers of logical sectors, and relative positioning of sectors arepossible.

In prior art memory systems, the address translation layer translatesthe accessed logical sectors to a physical block address through the useof a lookup table or, alternatively, through a scan of the physicalblocks of the non-volatile memory system or device. FIG. 3A details asimplified block diagram of a prior art lookup table address translationsystem 300. In FIG. 3A, a logical sector address 302 of a sectorread/write access request is submitted to the address translation layer(not shown, but can be either a firmware routine executing on aprocessor of a system, address translation hardware of a memorycontroller or in a control circuit internal to the memory itself) whichtranslates it to a physical block address by reference to a lookup table304, which is typically held in RAM. The address translation system 300then uses the translated logical address to access the indicatedphysical block from a row 308 of a non-volatile memory array 306. In aprior art physical scan address translation system, the physical blocks308 of the memory array 306 would be scanned by the address translationsystem 300 for a header that contained the matching logical sectoraddress 302.

A cluster based address translation in non-volatile memories has beendisclosed that allows for a reduced address translation table byutilizing clusters of sequentially addressed sectors. This cluster basedaddressing process is detailed in U.S. patent application Ser. No.10/933,017, titled “CLUSTER BASED NON-VOLATILE MEMORY TRANSLATIONLAYER”, Filed Sep. 2, 2004, and which is commonly assigned. FIG. 3Bdetails a simplified block diagram of such a cluster based lookup tableaddress translation system 320. In FIG. 3B, a logical sector address 322of a sector read/write access request is submitted to the cluster basedaddress translation layer (not shown) which translates it to a physicalcluster address by reference to a cluster address lookup table 324. Alogical sector address index to the selected logical sector within thecluster is also generated. The address translation system 320 then usesthe translated cluster address (typically: accessed address divided bythe number of sectors in a cluster) and the logical sector index(typically: accessed address modulus the number of sectors in a cluster)to access the indicated physical sector from a row 328 of a non-volatilememory array 326. It is noted that each cluster typically contains twoor more sequentially addressed logical sectors and can be defined to beof any granularity size, such that a cluster may incorporate one or morerows of the memory array.

FIG. 3C details a simplified block diagram of a cluster based lookuptable address translation system 340 that incorporates frequentlyupdated sector cluster addressing. In FIG. 3C, a logical sector address342 of a sector read/write access request is submitted to the clusterbased address translation layer (not shown) which, if it is not afrequently updated logical sector, translates it to a physical clusteraddress by reference to a cluster address lookup table 344. A logicalsector address index to the selected logical sector within the clusteris also generated. The address translation system 340 then uses thetranslated physical cluster address and the logical sector index intothe physical cluster to access the indicated physical block from a row348 of a non-volatile memory array 346. If the logical sector address isfor a frequently updated logical sector, the address lookup is done on aseparate logical sector address lookup table 350 that only handlesaddress translation for frequently updated logical sectors. The addresstranslation system 340 then uses the translated cluster address thephysical address from the frequently updated logical sector addresslookup table 350 to access the indicated cluster/page of logical sectors352 and select the most recently updated logical sector from it,allowing the frequently updated logical sectors to be managed on aseparate basis.

FIG. 4A details prior art encoding 400 of logical sectors incorporatingvalid/invalid data flags in a Flash memory array. In FIG. 4A, user data404 and header/overhead data 406 are shown in a memory array 402 (or inan erase block N 402 of a memory array) of the prior art, where a single512-byte logical sector is encoded in each physical page/row 410 of thememory array 402. The control data area 406 incorporates a valid/invaliddata flag 412 that is programmed from “1” to “0” when the data held inthat sector is invalidated. Logical Sectors/Pages A, B, and C are shownwritten into Rows 0 to 2 of the memory array 402 of FIG. 4A. LogicalPage/Sector A is shown as being updated and moved from Row 0 to Row 3,with the old data Logical Page/Sector A of Row 0 being invalidated bythe programming of the valid/invalid flag 412 from a “1” to a “0”.

A version number based data validation and address translation innon-volatile memories has been disclosed that allows for a reducedaddress translation table by utilizing clusters of sequentiallyaddressed sectors. This cluster based addressing process is detailed inU.S. patent application No. (U.S. patent application Ser. No.11/136,152), titled “VERSION BASED NON-VOLATILE MEMORY TRANSLATIONLAYER”, and which is commonly assigned. FIGS. 4B and 4C detail encoding420, 440 of logical sectors/logical data blocks incorporating suchversion number data fields. In FIG. 4B, user data 424 andheader/overhead data 426 are shown in a memory array 422 (or into anerase block N 422 of a memory array) utilizing version number validationof data. The memory array 422 contains a series of rows 430, each rowcontaining a sector having a user data area 424 and a control/overheaddata area 426. The control data area 426 incorporates a version numberdata field 432 that is programmed with a version number when the dataheld in that sector is initially written. Logical Pages/Sectors A, B,and C are shown written into Row 0 to 2 of the memory array 422 of FIG.4B. Logical Page/Sector A is shown as being updated and moved from Row 0to Row 3 and written with a new version number of “0001H” as incrementedfrom the original version number of “0000H” stored in Row 0. It is notedin version number based addressing, that version numbers can be appliedto any data structure in the non-volatile memory array, allowing controlstructures, tables, and erase blocks themselves to be addressed viaversion number address translation. It is also noted that in clusterbased addressing the cluster as a whole can have a version numberassigned, allowing the individual sectors to not have to have their ownassigned version numbers. It is further noted that older version numbersof selected sectors and control data structures that contain criticaldata can be kept to increase the robustness of the erase blockmanagement/address translation layer and/or the specific end userapplication stored on it.

In FIG. 4C, user data 444 and header/overhead data 446 are shown in amemory array 442 (or into an erase block N 442 of a memory array)utilizing version number validation of data, where multiple logicalsectors 448 are encoded in each physical page/row 450 of the memoryarray 442, each sector 448 including a version number data field 452.Each memory row 450 contains multiple logical sectors 448, each logicalsector 448 having a user data area 444 and a control/overhead datasection 446. In an example implementation, the row page 450 of FIG. 4Ccontains 2112 bytes of data (4×512 bytes user data+4×8 bytes ECC+32bytes for overhead) and is formatted to contain four logical sectors 448having a user data area 444 of 512-bytes each. The four logical sectors448 are typically sequentially addressed N, N+1, N+2, and N+3,particularly in cluster addressed embodiments, where N is a base logicalsector address for the row page 450. It is noted that the row pages 430and 450 of FIGS. 4B and 4C are for illustration purposes and that otherrow page sector formats of differing data sizes, numbers of logicalsectors, and relative positioning of sectors are possible. LogicalSectors A-D, E-H, and I-L are shown written into Rows 0 to 2,respectively, of the memory array 442 of FIG. 4C. Logical Sectors A andB are shown as being updated and moved from Row 0 to new Row 3 andwritten with a new version numbers of “0001H” as incremented from theoriginal version numbers of “0000H” for Logical Sectors A and B storedin Row 0. Logical Page A is shown as being updated a second time andmoved from Sector 12 in Row 3 to Sector 14 of Row 3 and written with anew version number of “0002H” as incremented from the updated versionnumber of “0001H”.

In embodiments of the present invention, an accessed address istranslated to a physical address in the non-volatile memory array bytraversing a hierarchal series of data structures and/or address tablesutilizing the characteristics of the accessed address until reaching thechild table containing the address translation entry of the addressbeing accessed. This address translation entry is read from the childtable to translate the accessed address to a physical address in thenon-volatile memory array. The data entries of one or more datastructures/tables of the hierarchal data structure can be updated two ormore times without having to overwrite and/or move data structure/tablebeing updated within the non-volatile memory array. This allows thehierarchal address translation data structure to be updated in-place inthe non-volatile memory array without having to be repeatedlymoved/erased as the underlying user data/sectors are moved/updated. Inembodiments of the present invention, as more levels of tables/datastructures are added to the hierarchal address translation datastructure and/or the number of times entries at each level can beupdated without requiring the table/data structure storing the data tobe moved is increased, the less the tables/data structures of thehierarchal address translation data structure have to be moved anderased, increasing its advantage for use in a non-volatile memory array.

In one embodiment of the present invention, erase block abstraction isalso utilized to further abstract the translation of addresses withinthe address translation layer and further reduce the number of updatesto the address translation table. In erase block abstraction thetranslated addresses from the address translation data table/hierarchyare to addresses in logical erase blocks. These logical erase blockaddresses must be further translated from logical erase block IDs to aphysical erase block ID in the array by reference to a separate EraseBlock Translation Table. This erase block abstraction allows the eraseblocks of the array to be moved and/or reclaimed and erased withouthaving to update each address entry in the translation layer data thatis currently stored in the erase block being moved/reclaimed; the datais simply moved and the logical erase block ID assigned to the new eraseblock. It is noted that erase block abstraction can be utilized withconventional address translation tables, improving their write fatiguecharacteristics and speed of reclaim/move operations. It is also notedthat erase block abstraction, also being an address translation withinthe memory array, can be arranged in a hierarchal address translationdata structure.

In a further embodiment of the present invention, an Entry Point datastructure is stored in a reserved Control Area of the non-volatilememory array. The Control Area allows the Entry Point to not be tied toa fixed address or erase block in the array. This allows it to be movedand updated as the address translation data structure itself is updatedand yet still quickly found at start-up by a scan of the Control Area ofthe memory array. The Control Area and Entry Point data structure alsoallow the configuration of the memory device to be stored and rapidlyaccessed, eliminating the need for a scan of the device to characterizeit for the translation layer firmware/driver upon power-up.

In a further embodiment of the present invention, cluster addresstranslation is utilized with the hierarchal address translation layer totranslate logical sector addresses to physical block addresses. Incluster addressing, each cluster contains a plurality of sequentiallyaddressed data blocks or sectors. This allows the use of a smaller tablefor the address translation lookup and/or faster scanning of the memorydevice or memory subsystem for the matching cluster address.

In another embodiment of the present invention, version numbervalidation of data is utilized with the hierarchal address translationlayer to select the most current hierarchal translation data and totranslate logical sector addresses to physical block addresses. Inversion number data validation, a version number can be stored for theassociated data is stored in a version number data field in each datastructure (such as control data/tables, erase blocks, data blocks,sectors, and/or clusters). This allows for determination of currentlyvalid data structure associated with the logical ID of the data bylocating the highest version associated with the logical ID. With thisapproach, old data need not be invalidated by programming avalid/invalid flag, speeding operation and minimizing program disturbrisk in the data rows surrounding the old data.

In another embodiment of the present invention, a specially formattedcluster is utilized with the hierarchal address translation datastructure for frequently updated logical sectors, where the clusterstores a single logical sector and new sequential physicalsectors/blocks of the cluster are written in turn with each new updateof the logical sector and the previous physical block holding the olddata invalidated until the entire cluster has been used. This allowsmultiple updates of a logical sector without having to move andinvalidate/erase the cluster containing the old data.

FIG. 5A details a simplified block diagram of a hierarchal addresstranslation data structure 500 of an embodiment of the presentinvention. In FIG. 5A, the hierarchal address translation data structure500 includes an Entry Point 502, a Root Table 504, and one or more ChildTables 506. The Entry Point 502 resides in a known location or can belocated by a scan of a defined Control Area of reserved erase blocks ofthe non-volatile memory array and contains a pointer entry to the RootTable 504. The Control Area or Entry Point 502 can also contain theconfiguration data for the memory device, eliminating the need for ascan of the memory device to characterize it for the firmware/driver. Inone embodiment of the present invention, the Entry Point 502 iseliminated and Root Table 504 is utilized directly as the entry point.The Root Table 504 contains a series of pointer entries to the physicallocations in the memory array of each of the Child Tables 506. The ChildTables are divided by ranges of addresses and contain addresstranslation data entries for the data stored in the non-volatile memorydevice. Each of the data entries in the Entry Point 502, the Root Table504, and the one or more Child Tables 506 can be updated L, M, and Ntimes, respectively, (L, M, and N are determined by the number ofpossible update fields of the data structure, typically L, M, and N aredetermined based on a selected base unit of storage of the memorydevice, such as a row and/or sector/cluster size, and the number oftimes the table or data structure can be updated within in this baseunit of storage; e.g., a Child Table data structure that is onesector/512 bytes in size can be updated 4 times in a cluster that is arow of 2048 bytes size and can be divided into 4 logical sectors, ifinstead the Child Table is 1024 bytes in size, it can be updated twicein the 2048 byte cluster) before the Table/data structure must be movedto a new location in the non-volatile memory array and the pointer entrypointing to it updated in the Table/data structure above it in thehierarchy (the Parent Table).

In FIG. 5A, a logical address of a read/write access request issubmitted to the address translation layer which translates it to aphysical address by reference to the hierarchal address translation datastructure 500. In this translation, the translation layer references theEntry Point 502 to retrieve the address of (the pointer to) the RootTable 504. The Root Table 504 is then read to determine in which ChildTable 506 the address of the memory access is stored. The address of(the pointer of) the selected Child Table is then retrieved from theRoot Table 504 and the selected Child Table 506 accessed. The addresstranslation entry of the memory access is then retrieved from the ChildTable 506 and the translated physical address accessed in the memoryarray. In this translation, the most recent record (of the L, M, or Nnumber of possible updates for each entry/record) in each datastructure/table in the hierarchy is utilized.

As noted above, the address entries are typically stored in the ChildTables by address ranges. Other address mapping functions to the ChildTables 506, such as by hash function, most recently used/updated, orrandom placement and simple scanning of all entries of the Child Tables506 to locate an entry, are possible and will be apparent to thoseskilled in the art with the benefit of the present disclosure. It isalso noted that it is possible to further divide each Child Table 506into smaller subsets of address entries and add one or more furtherlayers of Child Tables below the existing Child Tables 506 to furtherreduce the size of the final Child Tables at the bottom of thehierarchy. This allows the hierarchal address translation data structure500 to handle situations where the number of address entries/array sizehas been increased or the size of the individual address entriesthemselves have been increased to store additional information on eachaddress being translated without increasing the size of the Root Table504. As noted above, as more levels of tables/data structures are addedto the hierarchal address translation data structure 500 and/or thenumber of times entries at each level can be updated without requiringthe table/data structure storing the data to be moved are increased, theless the tables/data structures of the hierarchal address translationdata structure have to be moved and erased.

As stated above, each of the data entries in the Entry Point 502, theRoot Table 504, and the one or more Child Tables 506 can be updated L,M, and N times, respectively, before the Table must be moved to a newlocation in the non-volatile memory array and the pointer entry pointingto the Table updated in the parent Table/data structure above it in thehierarchal tree. In updating the hierarchal address translation datastructure 500 after new or updated data is written to the non-volatilememory array, the Child Table 506 that contains the address entry forthe new/updated data is first reviewed to check if there is remainingspace in the address entry. If space remains (not all N spaces availablefor the address entry in the Child Table 506 have been written/filled)the new address translation information (the new physical address of thedata) is written to the address entry. If the address entry in the ChildTable 506 is filled (all N spaces in the address entry have been used),a new Child Table 506 is created and the most recent entries from theold Child Table are copied into it, along with the currently updatedaddress entry. The pointer to Child Table 506 is then changed in theRoot Table 504 to point to the new Child Table 506 and the old ChildTable 506 scheduled for deletion. If the Child Table entry in the RootTable 504 is filled (all M spaces in the pointer entry have been used),a new Root Table 504 is created and the most recent entries from the oldRoot Table are copied into it, along with the currently updated ChildTable entry/pointer. The pointer to Root Table 504 is then updated inthe Entry Point 502 to point to the new Root Table 504 and the old RootTable 504 scheduled for deletion. If the Root Table pointer entry in theEntry Point 502 is filled (all L spaces in the pointer entry have beenused), a new Entry Point 502 is created in the Control Area and the mostrecent entries from the old Entry Point 502 are copied into it, alongwith the currently updated Root Table entry. The old Entry Point 502 isthen scheduled for deletion.

In one embodiment of the present invention, the address data/addressentries stored in the hierarchal address translation data structure 500are direct logical address to physical address translation entries. Inanother embodiment of the present invention, the address data/addressentries stored in the hierarchal address translation data structure 500are logical cluster address to physical cluster address translationentries. In this cluster based addressing, a logical cluster address(accessed address/number of sectors in a cluster) of a read/write accessrequest is submitted to the address translation layer (not shown) whichtranslates it to a physical cluster address by reference to clusteraddress translation data which is stored in the hierarchal addresstranslation data structure 500. A sector address index to the selectedlogical sector within the cluster can also be generated. The addresstranslation system then uses the translated physical cluster address toaccess the indicated physical sector from a cluster of a non-volatilememory array, with the logical sector index (accessed address modulusthe number of sectors in a cluster) or scanning used to select thedesired sector from the retrieved physical cluster. In yet anotherembodiment of the present invention, a specially formatted cluster,called a single sector cluster, is utilized for frequently updatedlogical sectors. The special single sector cluster stores a singlelogical sector, where updates to the stored sector are writtensequentially to previously unused space in the single sector cluster andthe previous sector holding the old data is invalidated until the entiresingle sector cluster has been used. This allows multiple updates of alogical sector without having to move/erase the cluster containing theold sector data.

In a further embodiment of the present invention, the addresstranslation layer utilizes a version number associated with data storedin the non-volatile memory array, instead of marking data with avalid/invalid data flag. Address translation in data versioning memoryembodiments of the present invention utilizes this stored version numberin combination with the data grouping's ID (sector logical ID, logicaldata block ID, cluster logical ID, data structure ID, or data table ID)to translate the logical address to the matching physical address, whichcontain the current data. In this address translation, a number ofphysical locations in the memory array associated with the logical ID ofthe data group are located in the memory array. The version numberassociated with each of these physical locations is then compared tolocate the physical location with the most-current stored versionnumber. In one embodiment of the present invention, accessed address orcluster is translated to a physical erase block, which is then scannedfor the sector ID that contains the most-current version number. Inanother embodiment, the version number for each sector/cluster ID isstored in the hierarchal address translation data structure 500. Thisallows the physical address with the most recent version number to thenbe directly utilized for performing the memory access.

It is noted that the data structure/table elements of the hierarchaladdress translation data structure 500 can be individually marked withversion numbers so that old tables/data structures do not need to beinvalidated by setting a valid/invalid flag. In one embodiment of thepresent invention, older versions of these data structure/table elementsand/or other selected critical data elements of the non-volatile memorydevice are reserved to selected version number depths and notreclaimed/erased from the memory array to provide for increasedtranslation system robustness and a limited undo feature. These retaineddata structure/table elements and/or other selected critical dataelements can also be utilized to enhance error correction routines ofthe non-volatile memory device firmware/driver software if ECC detectsan error in the currently valid data structure/table elements and/orother selected critical data elements.

FIG. 5B details a simplified block diagram of a hierarchal addresstranslation data structure 550 of another embodiment of the presentinvention. In FIG. 5B, the hierarchal address translation data structure550 includes an Entry Point 552, a Root Table 554, one or more ChildTables 556, and a Logical Erase Block to Physical Erase Block Table 558.As with the hierarchal address translation data structure 500 of FIG.5A, the Entry Point 552 of the hierarchal address translation datastructure 550 of FIG. 5B resides in a known location or can be locatedby a scan of a defined Control Area of reserved erase blocks of thenon-volatile memory array and contains a pointer entry to the Root Table554. The Root Table 554 contains a series of pointer entries to thephysical locations in the memory array of each of the Child Tables 556.The Child Tables are divided by ranges of addresses and contain addresstranslation data entries for the data stored in the non-volatile memorydevice. The Entry Point 552 also contains a pointer to the currentLogical Erase Block to Physical Erase Block Table 558. The Logical EraseBlock to Physical Erase Block Table 558 contains logical erase block tophysical erase block address translation entries. Each of the dataentries in the Entry Point 552, the Root Table 504, and the one or moreChild Tables 556 can be updated L, M, and N times, respectively, beforethe Table must be moved to a new location in the non-volatile memoryarray and the pointer entry pointing to it updated in the Table/datastructure above it in the hierarchy (the Parent Table). Each entry inthe Logical to Physical Erase Block Table 558 can be updated K timeseach before a new Logical to Physical Erase Block Table 558 must becreated, the current entries moved, and the pointer entry to it in theEntry Point 552 updated. In one embodiment of the present invention, theLogical to Physical Erase Block Table 558 itself can be expanded to be ahierarchy of tables, like the hierarchal address translation datastructure 550, to help minimize write fatigue in the non-volatile memorydevice. It is noted that the abstraction of the Logical Erase Block toPhysical Erase Block Table 558 effectively adds more levels oftables/data structures to the hierarchal address translation datastructure 550 and further delays updates to the address translation datastored in the hierarchal address translation data structure 550 proper,thus decreasing the number of times the tables/data structures of thehierarchal address translation data structure have to be moved anderased, increasing its advantage for use in a non-volatile memory array.

In FIG. 5B, a logical address of a read/write access request issubmitted to the address translation layer which translates it to aphysical address by reference to the hierarchal address translation datastructure 550 and the Logical to Physical Erase Block Table 558. In thistranslation, the translation layer references the Entry Point 552 toretrieve the address of (the pointer to) the Root Table 554. The RootTable 554 is then read to determine the Child Table 556 that the addressof the memory access is stored in. The address of (the pointer of) theselected Child Table is then retrieved from the Root Table 554 and theselected Child Table 556 accessed. The address entry of the memoryaccess is then retrieved from the Child Table 556. The retrieved entryfrom the Child Table translates the logical address to a local addressand/or a logical erase block. The pointer to the Logical to PhysicalErase Block Table 558 is taken from the Entry Point 552 and the Logicalto Physical Erase Block Table 558 utilized to translate the logicalerase block ID to a physical erase block ID in the non-volatile memoryarray. The translated local address is then accessed in the physicalerase block in the non-volatile memory array or the physical erase blockis scanned to locate the accessed sector. The abstracted erase blockaddress translation of the hierarchal address translation data structure550 of FIG. 5B allow for the erase blocks of the non-volatile memorydevice to be moved around, erased, and reclaimed with only having toupdate the entries in the Logical to Physical Erase Block Table 558. Thetranslation data entries in the Child Tables 556 do not have to beupdated, improving system performance for these operations and reducingwrite fatigue inducing updates in the Child Tables 556.

As with the hierarchal address translation data structure 500 of FIG.5A, each of the data entries in the Entry Point 552, the Root Table 554,and the one or more Child Tables 556 of the hierarchal addresstranslation data structure 550 can be updated L, M, and N times,respectively, before the Table must be moved to a new location in thenon-volatile memory array and the pointer entry pointing to it updatedin the Table/data structure above it in the hierarchy. In addition,entries of the Logical to Physical Erase Block Table 558 can be updatedK times before the Logical to Physical Erase Block Table 558 must bemoved when one of the entries is updated a K+1 time. In updating theLogical to Physical Erase Block Table 558 after an erase block isreclaimed or moved, if the entry in the Logical to Physical Erase BlockTable 558 is filled (all K spaces in the entry have been used), a newthe Logical to Physical Erase Block Table is created and the most recententries from the old Logical to Physical Erase Block Table 558 arecopied into it, along with the currently updated logical erase block tophysical erase block address entry. The pointer to the Logical toPhysical Erase Block Table 558 is then changed in the Entry Point 552 topoint to the new Logical to Physical Erase Block Table 558 and the oldLogical to Physical Erase Block Table 558 scheduled for deletion. If theLogical to Physical Erase Block Table pointer entry in the Entry Point552 is filled (all L spaces in the pointer entry have been used), a newEntry Point 552 is created and the most recent entries from the oldEntry Point 552 are copied into it, along with the currently updatedLogical to Physical Erase Block Table entry/pointer. As stated above,typically L, M, N, and K are determined based on a selected base unit ofstorage of the memory device, such as a row and/or sector/cluster size,and the number of times the table or data structure can be updatedwithin in this base unit of storage.

FIGS. 6A to 6E detail state transition diagrams of a program operationfor hierarchal address translation systems of non-volatile memorydevices of the present invention showing system initialization, access,update and erase block reclaiming.

FIG. 6A details a state transition diagram 600 for system/non-volatilememory initialization for an address translation system for non-volatilememory devices of the present invention. As shown in FIG. 6A, at systempower-up 602, the system searches the known start address location orthe Control Area (typically the first X number of erase blocks) for theEntry Point 604. If the known start address location/Control Area/firstX erase blocks are blank 606 the non-volatile memory device is assumedto have been erased or is blank and starts formatting operations 608. Ifthe Entry Point is found at the known start location or within the firstX erase blocks the system locates the non-volatile memory deviceconfiguration information from it and loads the device configuration610. If desired, at this time the system can also cache selected datastructures and tables of the address translation system to speed upoperation of the address translation layer. If the data of the knownstart address location/Control Area or the Entry Point or the loadedaddress translation system is incomplete or damaged, a Recovery Processis started.

FIG. 6B details a state transition diagram 620 for translating a logicaladdress for memory access to a physical address for non-volatile memorydevices of the present invention. As shown in FIG. 6B, upon receiving amemory access request 622 (a read, write, etc.) to the non-volatilememory array, the logical address is translated to a physical address byreference to the hierarchal address translation data structure 500 ofFIG. 5A. The pointer to the Root Table 504 from the Entry Point 502 istaken 624 by the translation layer to retrieve the Root Table 504, if itis not already cached in system RAM. The address of (the pointer of) theChild Table 506 containing the address containing the accessed addressis then retrieved 626 from the Root Table 504 and the selected ChildTable 506 accessed. This selection and access of a Child Table 626 canbe optionally repeated 628 to traverse any additional layers of ChildTables 506, from parent to child, until a Child Table 506 that is aterminal leaf of the hierarchal address translation data structure tree500 is reached. The address entry of the memory access is then retrieved630 from the Child Table 506 and the translated physical addressaccessed 632 in the memory array.

FIG. 6C details a state transition diagram 640 for translating a logicaladdress for memory access to a physical address for non-volatile memorydevices of the present invention utilizing erase block abstraction. Asshown in FIG. 6C, upon receiving a memory access request 622 (a read,write, etc.) to the non-volatile memory array, the logical address istranslated to a physical address by reference to the hierarchal addresstranslation data structure 550 of FIG. 5B. The pointer to the Root Table554 from the Entry Point 552 is taken 624 by the translation layer toretrieve the Root Table 554. The address of (the pointer of) the ChildTable 556 containing the accessed address is then retrieved 626 from theRoot Table 554 and the selected Child Table 556 accessed. This selectionand access of a Child Table 626 can be optionally repeated 628 totraverse any additional layers of Child Tables 556 until a Child Table556 that is a terminal leaf of the hierarchal address translation datastructure tree 550 is reached. The address entry of the memory accessand logical erase block ID are then retrieved 630 from the Child Table556. The pointer to the Logical to Physical Erase Block Table 558 fromthe Entry Point 552 is taken 642 by the translation layer to retrievethe Logical to Physical Erase Block Table 558. The erase blocktranslation entry for the logical erase block ID is then retrieved 644from the Logical to Physical Erase Block Table 558. The translatedphysical erase block and local physical address of the memory access isthen accessed 646 in the memory array.

FIG. 6D details a state transition diagram 650 for updating thetranslation data of the hierarchal address translation data structure500, 550 for non-volatile memory devices of the present inventionutilizing erase block abstraction. As shown in FIG. 6D, uponupdating/writing 652 new data to a blank/erased location in thenon-volatile memory array, the Child Table 506, 556 containing theupdated/new address entry is retrieved from the hierarchal addresstranslation data structure 500, 550 by retrieving 654 the Root Table504, 554 and then retrieving 656 the Child Table 506, 556 containing theaddress of the new/updated logical address. As above, this selection andaccess of a Child Table 656 can be optionally repeated 658 to traverseany additional layers of Child Tables 506, 556. The address entry forthe updated address is then retrieved 660 and checked to see if updatespace is available 662. If update space is available, the updatedaddress entry is written 664 to the Child Table 506, 556 and the updateprocess finishes 676. If no update space is available in the Child Table506, 556, the process enters a loop 678 to traverse back up thehierarchal address translation data structure 500, 550. In this loop678, a new current table/data structure is created 666 and themost-current entries of the old table/data structure copied over to italong with the currently updated entry. If the space required for a newcurrent table/data structure is not available, a blank erase block mayneed to be reclaimed to provide the required data space first byperforming garbage collection and erasure operation on a currentlyutilized erase block. The pointer entry to the current table/datastructure in the parent table/data structure is checked 670 to see ifupdate space is available. If update space is available in the pointerentry in the parent table/data structure, the pointer is updated topoint to the current table 672 and the update process finishes 676.Otherwise, if update space is not available in the parent table/datastructure and the current table/data structure is not the Entry Pointdata structure 668, the update process loops 678 to create a newtable/data structure with the parent table/data structure set as thecurrent table/data structure 674. If the current table/data structure isthe Entry Point data structure 502, 552, the update process finishes676. Upon looping 678, a new parent table/data structure (now beingutilized as the current table/data structure in the present iteration ofthe loop) is created and populated with the most-current entries of theold parent table/data structure 666 and the update space in its parenttable/data structure checked as described above. This process continuestraversing back up the hierarchal address translation data structure500, 550 until a parent table with update space available in its pointerentry is found or the Entry Point 502, 552 is reached and updated.

FIG. 6E details a state transition diagram 680 for reclaiming/movingerase blocks in non-volatile memory devices of the present inventionutilizing erase block abstraction. As shown in FIG. 6E, uponmoving/reclaiming 682 an erase block to a blank/erased erase block inthe non-volatile memory array, the most-current data (in versioningembodiments) or currently valid data (in non-versioning embodiments) iscopied from the old erase block to a new location in a blank/erasederase block. The Logical to Physical Erase Block Table 558 is retrieved684 utilizing the pointer from the Entry Point 552 and the erase blocktranslation entry for the logical erase block ID in the Logical toPhysical Erase Block Table 558 is selected 686. The erase blocktranslation entry is checked for available update space 688. If space isavailable in the erase block translation entry, the updated entrymapping the logical erase block ID to the new physical erase block iswritten 690 to the Logical to Physical Erase Block Table 558, the olderase block is scheduled for erasure 694, and the process finishes 698.If update space is not available in the erase block translation entry, anew Logical to Physical Erase Block Table 558 is created, themost-current erase block translation entries are copied over to it alongwith the currently updated entry, and the pointer to the Logical toPhysical Erase Block Table 558 in the Entry Point 552 is updated 692. Ifspace is not available in the pointer in the Entry Point 552, a newEntry Point 552 data structure is created and the current data copied toit. The old erase block is then scheduled for erasure 694 and theprocess finishes 698.

FIG. 7 details a simplified block diagram of a hierarchal addresstranslation data structure 700 of another embodiment of the presentinvention. In FIG. 7, the hierarchal address translation data structure700 comprises a Data_Root entry point 702, a Data_Map Table 704, one ormore consecutive sector groups (CSG, containing cluster addresstranslation tables) Tables 706, one or more discrete sector group (DSG,containing address translation tables to individually stored sectors)Tables 708, a Block_Map Table 710, and a Block_ID Table 712. TheData_Root entry point 702 resides in a defined Control Area of reservederase blocks (for example, the first 10 erase blocks of 2048 eraseblocks) of the non-volatile memory array and can be located atstart-up/power-up by a scan of the Control Area. The Data_Root 702contains a pointer entry to the Data_Map 704 and the configuration datafor the memory device, eliminating the need for a scan of the memorydevice to characterize it for the firmware/driver. The Data_Map Table704 contains a series of pointer entries to the physical locations inthe memory array of each of the cluster based consecutive sector groups(CSG) Child Tables 706. The CSG Tables are divided by ranges ofaddresses and contain address translation data entries for the clustergrouped data stored in the non-volatile memory device. The Data_MapTable 704 also contains a series of pointer entries to the physicallocations of each of the discrete sector group (DSG) Child Tables 708,which contain address translation data entries for individually storedsectors or single sector clusters that store frequently updated sectors.The Data_Map Table 704 also contains pointers to the Block_Map 710 andBlock_ID 712 Tables. The Block_ID Table 712 stores logical erase blockto physical erase block address translation data for erase blockabstraction. The Block_Map Table 710 stores erase block configurationdata, such free, bad, and utilized data blocks for block allocationpurposes.

In the hierarchal address translation data structure 700 of FIG. 7, eachof the CSG Tables 706 and DSG Tables 708 can be updated two or fourtimes, depending on size of the tables (page size divided by the tablesize equals numbers of in-place updates possible) before a new CSG/DSGTable is created and the current address translation data moved. Each ofthe pointer entries in the Data_Map 704 and Data_Root 702 tables can beupdated four times each before a new Table must be created and thecurrent data moved. The entries of the Block_Map 710 and Block_ID 712Tables can be written only once and so any updates require new Block_Map710 and Block_ID 712 Tables to be created and the data updated andmoved. It is noted that the number of updates depends on the size of thetable/data structure and the number of update entries it has availableand thus the above description is not to be taken as limiting on thenumber of possible updates of the hierarchal address translation datastructure 700 described in FIG. 7.

In FIG. 7, a logical address of a read/write access request submitted tothe address translation layer is translated to a physical address byreference to the hierarchal address translation data structure 700 andthe logical to physical erase block Block_ID 712 translation table. Inthis translation, the translation layer references the Data_Root 702 toretrieve the address of (the pointer to) the Data_Map Table 704. TheData_Map Table 704 is then read to determine the CSG Table 706 or DSGTable 708 that the address of the memory access is stored in. Theaddress of (the pointer of) the selected CSG/DSG Table is then retrievedfrom the Data_Map Table 704 and the selected CSG/DSG Table 706, 708accessed. The address entry of the memory access is then retrieved fromthe CSG/DSG Table 706, 708. The retrieved entry from the CSG/DSG Table706, 708 translates the logical address to a logical erase block ID. Thepointer to the Block_ID 712 is taken from the Data_Map 704 and theBlock_ID 712 utilized to translate the logical erase block ID to aphysical erase block ID in the non-volatile memory array. The translatedphysical erase block in the non-volatile memory array is then scanned tolocate the highest version number of the accessed sector.

FIGS. 8A to 8D detail state transition diagrams of a program operationfor the hierarchal address translation system 700 of FIG. 7, showingsystem initialization, access, update and erase block reclaiming.

FIG. 8A details a state transition diagram 800 for system/non-volatilememory initialization for the hierarchal address translation system 700of FIG. 7. As shown in FIG. 8A, at system power-up 802, the systemsearches 804 the Control Area (typically the first X number of eraseblocks) for the Data_Root 702. If the erase blocks of the Control Areaare blank 806, the non-volatile memory device is assumed to have beenerased or is blank and recovery or formatting operations are thenstarted 808. If the Data_Root 702 is found in the X erase blocks of theControl Area, the system locates the non-volatile memory deviceconfiguration information from it and loads the device configuration 810and, if desired, caches selected data structures and tables of thehierarchal address translation system 700 in RAM to speed up operationof the address translation layer. If the data of the Data_Root 702 orControl Area or the loaded hierarchal address translation system 700 isincomplete or damaged, a Recovery Process for the hierarchal addresstranslation system 700 is started.

FIG. 8B details a state transition diagram 820 for translating a logicaladdress for memory access to a physical address for the hierarchaladdress translation system 700 of FIG. 7. As shown in FIG. 8B, uponreceiving a memory access request 822 (a read, write, etc.) to thenon-volatile memory array, the logical address is translated to aphysical address by reference to the hierarchal address translation datastructure 700. The pointer from the Data_Root 702 to the Data_Map 704 istaken 824 by the translation layer to retrieve the current Data_MapTable 704. The address of (the pointer of) the CSG/DSG Table 706, 708containing the accessed address is then retrieved 826 from the Data_MapTable 704 and the selected CSG/DSG Table 706, 708 accessed. The addresstranslation entry and logical erase block ID of the memory access arethen retrieved 830 from the CSG/DSG Table 706, 708. The pointer to thecurrent Block_ID Table 712, stored in the Data_Map 704, is taken 832 bythe translation layer to retrieve the Block_ID erase block translationtable 712. The erase block translation entry for the logical erase blockID is then retrieved 834 from the Block_ID 712. The non-volatile memoryarray is then accessed utilizing the translated physical erase block836. The access can either scan the physical erase block for theaccessed sector ID and/or its latest version number or directly accessthe location using a translated local physical address of the memoryaccess retrieved from the CSG/DSG Table 706, 708.

FIG. 8C details a state transition diagram 850 for updating thetranslation data of the hierarchal address translation system 700 ofFIG. 7. As shown in FIG. 8C, upon updating/writing 852 new data to ablank/erased location in the non-volatile memory array, the CSG/DSGTable 706, 708 containing the updated/new address entry is retrieved 854from the hierarchal address translation data structure 700 by retrievingthe Data_Map Table 704 and then retrieving the CSG/DSG Table 706, 708containing the address of the new/updated logical address and accessingthe entry. The address entry for the updated address is then checked tosee if update space is available 856. If update space is available, theupdated address entry is written 858 to the CSG/DSG Table 706, 708 andthe update process finishes 874. If no update space is available in theCSG/DSG Table 706, 708, a new CSG/DSG Table 706, 708 is created and themost-current entries of the old table/data structure copied over to italong with the currently updated entry 860. The Data_Map Table 704 isthen checked 862 to see if update space is available in the pointer tothe current CSG/DSG Table 706, 708. If update space is available in thepointer entry in the Data_Map Table 704, the pointer is updated to pointto the current table 864 and the update process finishes 874. Otherwise,if update space is not available in the Data_Map 704, a new Data_MapTable 704 is created and the most-current entries of the old Data_Map704 copied over to it along with the currently updated CSG/DSG Table706, 708 pointer entry 866. The Data_Root 702 is then checked 868 to seeif update space is available in the pointer to the current Data_Map 704.If update space is available in the pointer entry in the Data_Root 702,the pointer is updated to point to the current table 870 and the updateprocess finishes 874. Otherwise, if update space is not available in theData_Root 702, a new Data_Root 702 is created and the most-currententries of the old Data_Root 702 copied over to it along with thecurrently updated Data_Map 704 pointer entry 872, the process thenfinishes 874.

FIG. 8D details a state transition diagram 880 for reclaiming/movingerase blocks in non-volatile memory devices utilizing the hierarchaladdress translation system 700 of FIG. 7. As shown in FIG. 8D, uponmoving/reclaiming 882 an erase block to a blank/erased erase block inthe non-volatile memory array, the most-current data is copied from theold erase block to a new location in a blank/erased erase block. TheBlock_ID Table 712 is retrieved 884 utilizing the pointer from theData_Map 704 and the erase block translation entry for the logical eraseblock ID in the Block_ID Table 712 is selected 886. As the Block_Map 710and Block_ID 712 only contain non-updateable entries they need not bechecked for available update space. A new Block_ID Table 712 is created,the most-current erase block translation entries are copied over to italong with the currently updated entry, and the pointer to the Block_IDTable 712 in the Data_Map 704 is updated 888. If space is not availablein the Block_ID pointer in the Data_Map 704, a new Data_Map 704 datastructure is created and the current data copied to it, and the Data_Mappointer updated as detailed in FIG. 8C. The old erase block is thenscheduled for erasure 890 and the utilzed/free erase block listing inthe Block_Map 710 is updated and the process finishes 892.

It is noted that other address translation apparatuses and methodsincorporating embodiments of the present invention are possible and willbe apparent to those skilled in the art with the benefit of thisdisclosure.

CONCLUSION

A non-volatile memory data address translation scheme has been detailedthat utilizes a hierarchal address translation system that is stored inthe non-volatile memory itself. Embodiments of the present inventionutilize a hierarchal address data and translation system wherein theaddress translation data entries are stored in one or more datastructures/tables in the hierarchy, one or more of which can be updatedin-place multiple times without having to overwrite data. Thishierarchal address translation data structure and multiple update ofdata entries in the individual tables/data structures allow thehierarchal address translation data structure to be efficiently storedin a non-volatile memory array without markedly inducing write fatigueor adversely affecting the lifetime of the part. The hierarchal addresstranslation of embodiments of the present invention also allow for anaddress translation layer that does not have to be resident in systemRAM for operation.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement, which is calculated to achieve the same purpose,may be substituted for the specific embodiment shown. This applicationis intended to cover any adaptations or variations of the presentinvention. Therefore, it is manifestly intended that this invention belimited only by the claims and the equivalents thereof.

1. A method of operating a non-volatile memory device, comprising:looking up a logical sector address of a memory access to thenon-volatile memory in a hierarchal address translation data structureto translate the logical sector address to a physical sector address,wherein the hierarchal address translation data structure contains twoor more Tables/data structures arranged in a hierarchal data tree;accessing the logical sector address in a physical sector address of thememory array in reference to a version number stored in a version numberdata field of the sector; and accessing the physical sector address inthe non-volatile memory device.
 2. The method of claim 1, wherein thehierarchal address translation data structure further comprises: a RootTable; one or more Child Tables; and wherein the Root Table contains oneor more address pointer data entries to the one or more Child Tables,and each of the one or more Child Tables contain one or more addresstranslation data entries to translate a logical address to a physicaladdress.
 3. The method of claim 2, wherein each of the Root Table's oneor more address pointers data entries to the one or more Child Tablescan be updated one or more times without overwriting the previouspointer data stored in the entry, and each of the one or more ChildTable's one or more address translation data entries can be updated oneor more times without overwriting the previous translation data storedin the entry.
 4. The method of claim 2, further comprising an EntryPoint data structure, wherein the Entry Point data structure contains anaddress pointer data entry to the Root Table.
 5. The method of claim 4,wherein the Entry Point data structure's address pointer data entry tothe Root Table can be updated one or more times without overwriting theprevious pointer data stored in the entry.
 6. The method of claim 1,wherein looking up a logical address of a memory access to thenon-volatile memory in a hierarchal address translation data structurefurther comprises: traversing the hierarchal data tree of the hierarchaladdress translation data structure starting from a Root Table; selectinga Child Table containing an address translation data entry for theaccessed logical address; and reading the address translation data entryfor the accessed logical address to translate the logical address to aphysical address.
 7. The method of claim 6, wherein traversing thehierarchal data tree of the hierarchal address translation datastructure starting from a Root Table further comprises retrieving theaddress to the Root Table from an Entry Point data structure.
 8. Themethod of claim 1, wherein the hierarchal address translation datastructure further comprises a Logical to Physical Erase BlockTranslation Table.
 9. The method of claim 8, further comprising:translating a logical erase block ID to a physical erase block IDutilizing the Logical to Physical Erase Block Translation Table.
 10. Themethod of claim 1, wherein looking up a logical address of a memoryaccess to the non-volatile memory in a hierarchal address translationdata structure to translate the logical sector address to a physicalsector address further comprises looking up a logical address of amemory access to the non-volatile memory in a hierarchal addresstranslation data structure to translate the logical sector address to aphysical cluster address, wherein each cluster contains one or moreconsecutively addressed sectors.
 11. The method of claim 1, wherein anEntry Point is stored at a known address location or is stored within adefined Control Area of the non-volatile memory device.
 12. The methodof claim 11, wherein the Entry Point stores one of configurationinformation or a pointer to configuration information for thenon-volatile memory device.
 13. A method of operating a non-volatilememory device, comprising: looking up a logical sector address of amemory access to the non-volatile memory in a hierarchal addresstranslation data structure to translate the logical sector address to aphysical sector address, wherein the hierarchal address translation datastructure contains two or more Tables/data structures arranged in ahierarchal data tree; accessing the physical sector address in thenon-volatile memory device; updating the hierarchal address translationdata structure when user data stored in the non-volatile memory deviceis updated by traversing up the hierarchal address translation datastructure, starting with a Table storing the changed address translationentry, the updating further comprising: checking if update space remainsin a changed data entry or address pointer data entry in a currentTable/data structure of a current level of the hierarchal addresstranslation data structure; updating the changed data entry or addresspointer data entry when update space is available, and ending the updateof the hierarchal address translation data structure; creating a newTable/data structure when the changed data entry cannot be updated inthe current Table/data structure; copying the most-currententries/pointers to the new Table/data structure; ending the update ofthe hierarchal address translation data structure if the currentTable/data structure is at a top level of the hierarchal addresstranslation data structure; traversing up to a next level of thehierarchal address translation data structure if the current Table/datastructure is not at the top level of the hierarchal address translationdata structure; and repeating updating on a parent Table/data structureof the next level to change an address pointer in the parent Table/datastructure from the current to the new Table/data structure.
 14. A methodof storing address translation data in a non-volatile memory array,comprising: storing address translation data in a hierarchal addresstranslation data structure of two or more Tables/data structures, wherethe two or more Tables/data structures are arranged in a hierarchaltree; and updating the hierarchal address translation data structurewhen user data stored in the non-volatile memory array is updated bytraversing up the hierarchal address translation data structure,starting with a Table storing the changed address translation entry, theupdating further comprising: checking if update space remains in achanged data entry or address pointer data entry in a current Table/datastructure of a current level of the hierarchal address translation datastructure; updating the changed data entry or address pointer data entrywhen update space is available, and ending the update of the hierarchaladdress translation data structure; creating a new Table/data structurewhen the changed data entry cannot be updated in the current Table/datastructure; copying the most-current entries/pointers to the newTable/data structure; ending the update of the hierarchal addresstranslation data structure if the current Table/data structure is at atop level of the hierarchal address translation data structure;traversing up to a next level of the hierarchal address translation datastructure if the current Table/data structure is not at the top level ofthe hierarchal address translation data structure; and repeatingupdating on a parent Table/data structure of the next level to change anaddress pointer in the parent Table/data structure from the current tothe new Table/data structure.
 15. The method of claim 14, wherein thehierarchal address translation data structure further comprises: a RootTable; one or more Child Tables; and wherein the Root Table contains oneor more address pointer data entries to the one or more Child Tables,and each of the one or more Child Tables contain one or more addresstranslation data entries to translate a logical address to a physicaladdress.
 16. The method of claim 15, wherein each of the Root Table'sone or more address pointers data entries to the one or more ChildTables can be updated one or more times without overwriting the previouspointer data stored in the entry, and each of the one or more ChildTable's one or more address translation data entries can be updated oneor more times without overwriting the previous translation data storedin the entry.
 17. The method of claim 15, further comprising an EntryPoint data structure, wherein the Entry Point data structure contains anaddress pointer data entry to the Root Table.
 18. The method of claim17, wherein the Entry Point data structure's address pointer data entryto the Root Table can be updated one or more times without overwritingthe previous pointer data stored in the entry.
 19. A non-volatile memorydevice, comprising: a non-volatile memory array having a plurality ofnon-volatile memory cells; and a control circuit, wherein the controlcircuit is adapted to access a logical address from the memory array bytranslating the logical address to a physical sector address of thememory array in reference to a hierarchal address translation datastructure stored in the non-volatile memory array, wherein thehierarchal address translation data structure comprises: an Entry Point;a Root Table; one or more Child Tables; and wherein the Entry Pointcontains an address pointer data entry to the Root Table, the Root Tablecontains one or more address pointer data entries to the one or moreChild Tables, and each of the one or more Child Tables contain one ormore address translation data entries to translate a logical address toa physical address; and wherein the control circuit is further adaptedto update the hierarchal address translation data structure when userdata stored in the non-volatile memory array is updated by traversing upthe hierarchal address translation data structure, starting with theChild Table storing the changed address translation entry, updating thehierarchal address translation data structure further comprising:checking if update space remains in a changed data entry or addresspointer data entry in a current Table/data structure of a current levelof the hierarchal address translation data structure; updating thechanged data entry or address pointer data entry when update space isavailable, and ending the update of the hierarchal address translationdata structure; creating a new Table/data structure when the changeddata entry cannot be updated in the current Table/data structure;copying the most-current entries/pointers to the new Table/datastructure; ending the update of the hierarchal address translation datastructure if the current Table/data structure is the Entry Point;traversing up to a next level of the hierarchal address translation datastructure if the current Table/data structure is not the Entry Point;and repeating updating on a parent Table/data structure of the nextlevel to change an address pointer in the parent Table/data structurefrom the current to the new Table/data structure.
 20. The non-volatilememory device of claim 19, wherein the one or more Child Tables arearranged in one or more layers of Tables, where each of the one or moreChild Tables in a bottom layer of Child Tables contain one or moreaddress translation data entries to translate a logical address to aphysical address and each of the one or more Child Tables in interveninglayers of Child Tables contain one or more address pointer data entriesto a lower layer of Child Tables.
 21. The non-volatile memory device ofclaim 19, wherein the Entry Point's address pointer data entry to theRoot Table can be updated one or more times without overwriting theprevious pointer data stored in the entry, each of the Root Table's oneor more address pointers data entries to the one or more Child Tablescan be updated one or more times without overwriting the previouspointer data stored in the entry, and each of the one or more ChildTable's one or more address translation data entries can be updated oneor more times without overwriting the previous translation data storedin the entry.
 22. The non-volatile memory device of claim 19, whereinthe hierarchal address translation data structure further comprises aLogical to Physical Erase Block Translation Table, where the one or moreaddress translation entries in the one or more Child Tables contain alogical erase block ID, and where the control circuit is adapted totranslate the logical erase block ID to a physical erase block utilizingthe Logical to Physical Erase Block Translation Table.
 23. Thenon-volatile memory device of claim 19, wherein the non-volatile memoryarray is further arranged into a plurality of erase blocks, each eraseblock containing a plurality of sectors.
 24. The non-volatile memorydevice of claim 23, wherein the plurality of sectors are furtherarranged into clusters of sequential sectors.
 25. The non-volatilememory device of claim 19, wherein the Entry Point is stored at knownaddress location or stored within a defined Control Area of thenon-volatile memory array.
 26. The non-volatile memory device of claim19, wherein the Entry Point stores one of configuration information or apointer to configuration information for the non-volatile memory device.27. The non-volatile memory device of claim 19, wherein the non-volatilememory is one of a NAND Flash memory device, a NOR Flash memory device,a Polymer memory device, a Ferroelectric Random Access Memory (FeRAM)device, an Ovionics Unified Memory (OUM) device, a Nitride Read OnlyMemory (NROM) device, a Carbon Nanotube Memory device, and aMagnetoresistive Random Access Memory (MRAM) device.
 28. A non-volatilememory device, comprising: a non-volatile memory array having aplurality of non-volatile memory cells and arranged into a plurality oferase blocks, each erase block containing a plurality of sectors: and acontrol circuit, wherein the control circuit is adapted to access alogical address from the memory array by translating the logical addressto a physical sector address of the memory array in reference to ahierarchal address translation data structure stored in the non-volatilememory array and to access a sector from the non-volatile memory arrayby translating a logical address of the sector to a physical sectoraddress of the memory array in reference to a version number stored in aversion number data field of the sector.
 29. A Flash memory device,comprising: a memory array having a plurality of non-volatile memorycells arranged in a plurality of erase blocks, each erase blockcontaining a plurality of clusters of one or more consecutivelyaddressed sectors; and a control circuit, wherein the control circuit isadapted to access a logical address from the memory array by translatingthe logical address to a physical sector address of the memory array inreference to a hierarchal address translation data structure stored inthe one or more erase blocks of the plurality of erase blocks; andwherein the hierarchal address translation data structure comprises: aData_Root; a Data_Map Table; one or more consecutive sector group (CSG)Tables or one or more discrete sector group (DSG) Tables; and whereinthe Data_Root contains an address pointer data entry to the Data_MapTable, the Data_Map Table contains one or more address pointer dataentries to the one or more CSG Tables or one or more DSG Tables, each ofthe one or more CSG Tables contain one or more address translation dataentries to translate a logical address to a physical address of acluster of consecutively address sectors, and each of the one or moreDSG Tables contain one or more address translation data entries totranslate a logical address to a physical address of a single sectorcluster of a frequently updated sector.
 30. The Flash device of claim29, wherein the Data_Root's address pointer data entry to the Data_MapTable can be updated one or more times without overwriting the previouspointer data stored in the entry, each of the Data_Map Table's one ormore address pointers data entries to the one or more CSG Tables or oneor more DSG Tables can be updated one or more times without overwritingthe previous pointer data stored in the entry, each of the one or moreCSG Table's one or more address translation data entries can be updatedone or more times without overwriting the previous translation datastored in the entry, and each of the one or more DSG Table's one or moreaddress translation data entries can be updated one or more timeswithout overwriting the previous translation data stored in the entry.31. The Flash memory device of claim 30, wherein the control circuit isadapted to update the hierarchal address translation data structure whenuser data stored in the non-volatile memory array is updated bytraversing up the hierarchal address translation data structure,updating the hierarchal address translation data structure furthercomprising: checking if update space remains in an address translationdata entry for the changed user data in a current CSG Table or DSGTable; updating the address translation data entry when update space isavailable, and ending the update of the hierarchal address translationdata structure; creating a new CSG Table or DSG Table when the changedaddress translation data entry cannot be updated in the current CSGTable or DSG Table; copying one or more most-current address translationentries to the new CSG Table or DSG Table; checking if update spaceremains in an address pointer to the current CSG Table or DSG Table inthe Data_Map Table; updating the changed address pointer entry whenupdate space is available, and ending the update of the hierarchaladdress translation data structure; creating a new Data_Map Table whenthe changed address pointer entry cannot be updated in the Data_MapTable; copying one or more most-current pointers to the new Data_MapTable; checking if update space remains in an address pointer to theData_Map Table in the Data_Root; updating the changed address pointerentry when update space is available, and ending the update of thehierarchal address translation data structure; creating a new Data_Rootwhen the changed address pointer entry cannot be updated in theData_Root; and copying one or more most-current pointers to the newData_Root.
 32. The Flash memory device of claim 29, wherein thehierarchal address translation data structure further comprises aBlock_ID erase block translation table, where the one or more addresstranslation entries in the one or more CSG Tables or one or more DSGTables contain a logical erase block ID, and where the control circuitis adapted to translate the logical erase block ID to a physical eraseblock utilizing the Block_ID Table.
 33. The Flash memory device of claim29, wherein the Flash memory device is one of a NAND Flash memory deviceand a NOR Flash memory device.
 34. A Flash memory device, comprising: amemory array having a plurality of non-volatile memory cells arranged ina plurality of erase blocks, each erase block containing a plurality ofclusters of one or more consecutively addressed sectors; and a controlcircuit, wherein the control circuit is adapted to access a logicaladdress from the memory array by translating the logical address to aphysical sector address of the memory array in reference to a hierarchaladdress translation data structure stored in the one or more eraseblocks of the plurality of erase blocks; and wherein the Flash memorydevice is adapted to access sectors in the memory array utilizing aversion number address translation to retrieve the physical address inthe memory array containing the most recent version of the accessedsector.
 35. A system, comprising: a host coupled to a non-volatilememory device, wherein the system is adapted to translate logicaladdresses to physical addresses in the non-volatile memory deviceutilizing hierarchal address translation data, where the hierarchaladdress translation data structure comprises: an Entry Point; a RootTable; one or more Child Tables; and wherein the Entry Point contains anaddress pointer data entry to the Root Table, the Root Table containsone or more address pointer data entries to the one or more ChildTables, and each of the one or more Child Tables contain one or moreaddress translation data entries to translate a logical address to aphysical address; and wherein the system is adapted to update thehierarchal address translation data structure when user data stored inthe non-volatile memory array is updated by traversing up the hierarchaladdress translation data structure, starting with the Child Tablestoring the changed address translation entry, updating the hierarchaladdress translation data structure further comprising: checking ifupdate space remains in a changed data entry or address pointer dataentry in a current Table/data structure of a current level of thehierarchal address translation data structure; updating the changed dataentry or address pointer data entry when update space is available andending the update of the hierarchal address translation data structure;creating a new Table/data structure when the changed data entry cannotbe updated in the current Table/data structure; copying the most-currententries/pointers to the new Table/data structure, ending the update ofthe hierarchal address translation data structure if the currentTable/data structure is the Entry Point; traversing up to a next levelof the hierarchal address translation data structure if the currentTable/data structure is not the Entry Point; and repeating updating on aparent Table/data structure of the next level to change an addresspointer in the parent Table/data structure from the current to the newTable/data structure.
 36. The system of claim 35, wherein thenon-volatile memory device comprises: a memory array having a pluralityof non-volatile memory cells arranged in a plurality of erase blocks,each erase block containing a plurality of sectors; and a controlcircuit, wherein the control circuit is adapted to access a logicaladdress from the memory array by translating the logical address to aphysical sector address of the memory array in reference to a hierarchaladdress translation data structure stored in the one or more eraseblocks of the plurality of erase blocks.
 37. The system of claim 35,wherein the Entry Point's address pointer data entry to the Root Tablecan be updated one or more times without overwriting the previouspointer data stored in the entry, each of the Root Table's one or moreaddress pointers data entries to the one or more Child Tables can beupdated one or more times without overwriting the previous pointer datastored in the entry, and each of the one or more Child Table's one ormore address translation data entries can be updated one or more timeswithout overwriting the previous translation data stored in the entry.38. The system of claim 36, wherein the system is adapted to accesslogical sectors of data in the non-volatile memory device utilizing acluster address translation to retrieve the physical address in thememory array of a cluster of consecutive sectors containing an accessedlogical sector.
 39. The system of claim 35, wherein the non-volatilememory is one of a NAND Flash memory device, a NOR Flash memory device,a Polymer memory device, a Ferroelectric Random Access Memory (FeRAM)device, an Ovionics Unified Memory (GUM) device, a Nitride Read OnlyMemory (NROM) device, and a Magnetoresistive Random Access Memory (MRAM)device.
 40. A system, comprising: a host coupled to a non-volatilememory device, wherein the system is adapted to translate logicaladdresses to physical addresses in the non-volatile memory deviceutilizing a hierarchal address translation data, where the hierarchaladdress translation data structure comprises: an Entry Point; a RootTable; one or more Child Tables; and wherein the Entry Point contains anaddress pointer data entry to the Root Table, the Root Table containsone or more address pointer data entries to the one or more ChildTables, and each of the one or more Child Tables contain one or moreaddress translation data entries to translate a logical address to aphysical address; and wherein the hierarchal address translation datastructure further comprises a Logical to Physical Erase BlockTranslation Table, where the one or more address translation entries inthe one or more Child Tables contain a logical erase block ID, and wherethe system is adapted to translate the logical erase block ID to aphysical erase block utilizing the Logical to Physical Erase BlockTranslation Table.
 41. A system, comprising: a host coupled to anon-volatile memory device, wherein the system is adapted to translatelogical addresses to physical addresses in the non-volatile memorydevice utilizing hierarchal address translation data; and wherein thenon-volatile memory device comprises: a memory array having a pluralityof non-volatile memory cells arranged in a plurality of erase blocks,each erase block containing a plurality of sectors; and a controlcircuit, wherein the control circuit is adapted to access a logicaladdress from the memory array by translating the logical address to aphysical sector address of the memory array in reference to a hierarchaladdress translation data structure stored in the one or more eraseblocks of the plurality of erase blocks; and wherein the system isadapted to access a sector from the non-volatile memory device bytranslating a logical address of the sector to a physical sector addressof the memory array in reference to a version number stored in a versionnumber data field of the sector.